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| 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3309 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 10 40 65 222 10 6.5 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.92 83.3 Unit C/W C/W Note 1: Please use devise on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-09-04 2SK3309 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr 10 V VGS 0V 10 9 ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 3/4 30 3/4 450 550 3.0 3/4 1.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.48 4.3 920 12 140 25 Max 10 3/4 100 3/4 5.0 0.65 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 3/4 VOUT 3/4 3/4 3/4 ns Turn-on time Switching time Fall time ton 3/4 RL = 40 W 35 tf Duty < 1%, tw = 10 ms = VDD ~ 200 V - 3/4 3/4 3/4 VDD ~ 360 V, VGS = 10 V, ID = 10 A 3/4 3/4 10 3/4 3/4 3/4 3/4 3/4 nC Turn-off time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd 60 23 9 14 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 280 2.7 Max 10 40 -1.7 3/4 3/4 Unit A A V ns mC Marking K3309 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3309 ID - VDS 10 Common source Tc = 25C Pulse test 15 10 20 8.5 8 16 15 10 ID - VDS Common source Tc = 25C Pulse test 8 9 (A) (A) ID 6 7.5 ID 12 8.5 8 Drain current Drain current 4 7 8 7.5 7 VGS = 6 V 2 VGS = 6 V 0 0 4 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test (V) 16 8 (A) ID VDS Drain-source voltage 12 6 ID = 10 A Drain current 8 25 4 Tc = -55C 4 5 2 2.5 100 0 0 2 4 6 8 10 12 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 100 Common source VDS = 20 V Pulse test 10 Common source Tc = 25C Pulse test RDS (ON) - ID iYfsi (S) Forward transfer admittance 10 Tc = -55C 100 25 Drain-source on resistance RDS (ON) (W) 1 VGS = 10, 15 V 1 0.1 0.1 1 10 100 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3309 RDS (ON) - Tc 2.0 Common source VGS = 10 V Pulse test 100 Common source Tc = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (W) 1.6 (A) 5 ID = 10 A 2.5 1.2 Drain reverse current IDR 10 1 10 5 0.1 3 1 VGS = 0, -1 V -0.6 -0.8 -1 -1.2 0.8 0.4 0 -80 -40 0 40 80 120 160 0.01 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 6 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 5 1000 Ciss Capacitance C (pF) 4 3 100 Coss 2 10 Common source VGS = 0 V f = 1 MHz 1 0.1 1 10 Crss 1 0 -80 100 1000 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 100 500 Dynamic input/output characteristics 20 Common source ID = 10 A Tc = 25C 16 Pulse test (W) (V) 80 400 VDD = 90 V VDS 300 360 200 180 PD VDS Drain power dissipation Drain-source voltage 40 VGS 8 20 100 4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 60 12 VGS (V) 2SK3309 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t T Duty = t/T Rth (ch-c) = 1.92C/W 0.001 10 m Single pulse 100 m 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 100 ID max (pulse) * 400 EAS - Tch (mJ) 1 ms * 10 Avalanche energy EAS ID max (continuous) 100 ms * 300 (A) 200 Drain current ID 1 DC operation Tc = 25C 100 0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 VDSS max 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V VDS (V) BVDSS IAR VDD VDS Drain-source voltage Test circuit RG = 25 W VDD = 90 V, L = 3.7 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB 2 - VDD / e VDSS o 5 2002-09-04 2SK3309 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 |
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